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BAT41
Small-Signal Diode Schottky Diode
Features
For general purpose applications. This diode features low turn-on voltage and high breakdown voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges This diode is also available in the MiniMELF case with type designation LL41.
Mechanical Data
Case: DO-35 Glass Case Weight: approx. 0.13g
Maximum Ratings and Thermal Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified.) Parameter Repetitive peak reverse voltage Forward continuous current at Tamb=25 C Repetitive peak forward current at tp<1s, @<0.5, Tamb=25oC Surge forward current at tp=10ms, Tamb=25 C Power dissipation at Tamb=25 C Thermal resistance junction to ambient air Junction temperature Ambient operating temperature range Storage temperature range
o o o
Symbol VRRM IF IFRM IFSM Ptot RJA Tj Tamb TS
Value 100 100 350 750 400 300
(1)
Unit Volts mA mA mA mW
o
(1)
(1)
(1)
(1)
C/W
o
125 -65 to +125 -65 to +150
C C C
o
o
Electrical Characteristics
(TJ=25oC unless otherwise noted.)
Parameter Reverse breakdown voltage Leakage current (2) Forward voltage Capacitance Reverse recovery time
(2) (2)
Symbol V(BR)R IR VF Ctot trr
Test Condition IR=100uA VR=50V, Tj=25 C VR=50V, Tj=100OC IF=1mA IF=200mA VR=1V, f=1MHz IF=10mA, IR=10mA, Irr=1mA, RL=100
O
Min. 100 -
Typ. 110 0.40 2 5
Max. 100 20 0.45 1.0 -
Unit Volts nA uA Volt pF ns
Notes:
1. Valid provided that leads at a distance of 4mm from case are kept at ambient temperature 2. Pulse test, tp=300uS
678
RATINGS AND CHARACTERISTIC CURVES
679

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